感應耦合電漿離子蝕刻技術應用於3D IC玻璃穿孔導線封裝研究

Investigation of Fabricated Through Glass Via (TGV) Process by Inductively Coupled Plasma Reactive Ion Etching (lCP-RIE) for 3D-IC Package Applications

湯喻翔(Yu-Hsiang Tang) ； 蕭銘華(Ming-Hua Shiao) ； 游智勝(Chih-Sheng Yu)

《科儀新知》 209期 (2016/12) Pp. 67-74

摘要

隨著晶片趨向輕薄短小、低耗電、低成本與多功能的需求，故晶片在系統中可使用的空間愈來愈小，因此發展三維玻璃穿孔導線(through glass via, TGV)技術可以有效提供晶片間在垂直方向之電訊連接，進而縮短其傳輸距離，成為該領域中較為突出且重視的一項技術。本研究主要目的在探討玻璃穿孔製程，使用感應耦合電漿離子蝕刻(inductively coupled plasma-reactive ion etching, ICP-RIE)系統，以八氟環丁烷(C_4F_8)與氦氣(He)混和氣體作為反應氣體，對石英玻璃進行穿孔結構製作，探討改變基板厚度、孔洞尺寸及蝕刻遮罩對表面形貌、蝕刻率及側壁垂直度等影響。實驗結果發現以最佳參數製程可得到一最快蝕刻速率約為0.408 μm/min，蝕刻穿孔後深度可達150 μm、穿孔直徑製程能力可達50 μm及側壁垂直度可達89°。

並列摘要

This paper presents the manufacturing process of through glass via (TGV) structure and direct implications on the design of quartz-based interposer applications for three-dimensional integrated circuit (3D-IC) packaging technology. First, we analyze detailed substrate thickness formed by dry etching with various associated structures based on the use of thin quartz as a substrate material. Then, we evaluated the holes etched in glass wafers by photolithography and inductively coupled plasma -reactive ion etching (ICP-RIE) techniques. The fabricated TGV morphology showed an excellent characterization between substrate thickness, via diameter, and via shape for a vertical interposer. Finally, we obtain that TGV structure with a diameter of 50 μm in 150 μm thin quartz wafer exhibit high usability for thin wafer processing with the optimized fabrication parameters.