- 期刊
金氧半場效應電晶體載子移動率之萃取與分析
A Study of Effective Carrier Mobility Extraction in MOSFETs
並列摘要
In our study, we will extract the effect carrier mobility from the measured I-V data of MOSFET devices by applying the least square curve fitting optimization which combining a new theoretical model of inversion layer charge and a physically-based semi-empirical model on carrier mobility. Meanwhile, we will also discuss the dimension effects about the mobilities and the interface characteristic parameters.
延伸閱讀
- Cheng, C. C. (2009). 高電壓橫向擴散金氧半電晶體中暫態熱載子效應與元件模型之探討 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2009.00117
- 王智偉（2007）。電感耦合式電漿蝕刻HfAlO金氧半場效電晶體之研究〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2007.00154
- 阮敦寶（2014）。電荷汲引技術應用於金氧半元件之界面層電特性量測研究〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2014.00376
- Yeh, S. P. (2008). Design and Application of Schottky Barrier MOSFETs [doctoral dissertation, National Tsing Hua University]. Airiti Library. https://doi.org/10.6843/NTHU.2008.00093
- Wei, L. (2009). Experimental Study of Carrier Transport and Important Device Parameters for Nanoscale Si MOSFETs [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2009.00070