摘要
快閃（flash）記憶體有資料儲存之功能，而資料之儲存與否主要是取決於其浮動閘上電荷量之改變。所以在本文，我們擬針對快閃記憶體在寫入及抹除的過程中，其臨限電壓相對於時間之改變量做深入的探討與研究。在此我們提出一個能精確預測寫入電荷量的模型，此模型稱為非馬克斯威爾熱載子產生電流模型（Non-Maxwellian hot carrier generation current model）；在抹除操作上，則是採用通用的福勒－諾德漢電子穿隧模型（Fowler-Nordheim electron tunneling model）。另外，從實驗量測結果發現與理論計算值相當吻合。
並列摘要
A non-Maxwellian hot carrier generation current model for simulation of charge injection and erasing in the submicron flash memory is presented in this paper. Unlike the conventional model, which is based on the local electric fields in the device, the proposed model accounts for nonlocal effects resulting from the large variations in electric field in submicron flash memory. Good agreements between the measured and calculated results in the charge writing and the Fower-Nordheim erasing operations are obtained.
延伸閱讀
- Ho, C. C. (2016). 超大規模快閃記憶體儲存裝置之效能、模組化和可靠度技術探討 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU201600610
- Hsieh, J. W. (2006). 快閃記憶體管理之可靠性及效能提升 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2006.00215
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