藉由氧化層退火來改善AlGaInP雷射二極體的電特性

本篇論文主要是利用爐管將二氧化矽退火，使得二氧化矽的緻密性更高，來改善AlGaInP雷射二極體特性並探討氧化層退火溫度對元件的影響。本實驗是在爐管中通入氮氣退火二氧化矽，並改變退火溫度在300℃～450℃之間以探討最佳的退火條件。本實驗得知隨著氧化層退火溫度的上升，起振電流跟著降低，由未經退火的32.82mA降至450℃退火的24.83mA，而斜率效率也由未經退火的0.57W/A上升到300℃退火的0.8W/A；所以可見藉由氧化層退火可有效的降低起振電流與增加斜率效率。除此之外，我們並改變工作溫度來探討AlGaInP雷射二極體的溫度穩定性，得到本元件可在90℃正常操作且代表溫度穩定性的特性溫度T0從未經退火的110.9K上升到450℃退火的116.6K，可知氧化層退火溫度的上升所得到的元件溫度穩定度較高。而就目前所知本論文是首先利用二氧化矽退火來改善AlGaInP雷射二極體的電特性。

關鍵字

AlGaInP雷射二極體；起振電流；斜率效率；特性溫度

並列摘要

In this thesis, the silicon dioxide is annealed by furnace so that the density of silicon dioxide is raised and improves the performance of the AlGaInP laser diode. In addition, we also investigate the dependence of annealing temperature on devices. In this study, nitrogen gas is introduced to anneal silicon dioxide and the annealing temperature is changed from 300℃ to 450℃ to find the optimum annealing condition. From our study, the threshold current Ith is reduced by increasing the annealing temperature; Ith is 32.82mA and 24.83mA at non-annealed and 450℃ annealed sample, respectively. The slope efficiency is also increased from a non-annealed sample of 0.57W/A to 300℃ annealed sample of 0.8W/A. Thus, the oxide annealing effectively reduces the threshold current and increases the slope efficiency. Furthermore, we change the operation temperature to investigate the temperature stability of AlGaInP laser diode; this device can normally operate at 90℃ and the characteristic temperature To is increased from 110.9K for non-annealed sample to 116.6K for 450℃ annealed sample. Thus, the high temperature annealed sample exhibits high stability for temperature. As far as we know, this is the first time the performance of AlGaInP laser diode is improved by oxide annealing.

並列關鍵字

AlGaInP laser diode ； threshold current ； slope efficiency and characteristic temperature

國際替代計量

藉由氧化層退火來改善AlGaInP雷射二極體的電特性

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