- 期刊
利用電子束微影技術完成奈米尺寸圖案
Implementing a Nano-Scale Pattern by the Electron-Beam Micro-lithography Technique
並列摘要
A nano-scale pattern has been defined by a micro-lithography technique. The resistance of an electron beam, NEB, is applied to electron-beam lithography, by which a 40 nm line-width structure was successfully fabricated. By using the electron-beam lithography technique, one can easily fabricate a 100 nm structure and reduce the line width of an electron device to below 60 nm. In this study, the characteristics of NEB resistance employed in micro-lithography and etching processes are investigated. In addition, the responses of different line widths have been compared.
延伸閱讀
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