以柴式拉晶法成長蘭克賽單晶

Growth of Lanthanum Gallium Silicate Single Crystals by Czochralski Pulling Method

陳正強(C. C. Chen) ； 羅翊庭(I. T. Lo) ； 劉竹峰(J. F. Liu) ； 洪正聰(C. C. Hung) ； 許能傑(N. J. Hsu)

《臺北科技大學學報》 40卷2期 (2007/11) Pp. 41-47

https://doi.org/10.29768/JNTUT.200711.0004

摘要

本研究使用柴式拉晶法(Czochralski Pulling Method)生長蘭克賽(Lanthanum Gallium Silicate，LGS)單晶晶體。將所得之LGS單晶以強光照射方式檢測其巨觀結構，藉以觀察所含氣孔或夾雜物情形，經過多次製程後，本研究已成功生長出直徑3.5公分、高度12.5公分之LGS高品質單晶。本研究採半自動化製程，拉晶過程可由設定好參數之電腦控制成長，並觀察成長時的重量及電壓變化，而相對地長晶程序中下晶種、退火及真空方面則需賴手動操作進行。特別是下晶種時要很精確判斷下種時間，以免晶種被瞬間融化。藉由實驗經驗找出最佳製程條件可使製程上人為操作因素之影響降至最低，以利提高長晶製程之穩定性。

關鍵字

柴式拉晶法 ； 蘭克賽 ； 單晶

並列摘要

In this paper, we use the Czochralski pulling method to grow lanthanum gallium silicate (Lanthanum Gallium Silicate, LGS) single crystals. The grown LGS crystals is exposed under bright light to examine its macro-structure, and to detect any bubbles or inclusions defects. After repeated experiments, a 3.5cm thick, 12.5 cm tall high quality LGS single crystal is grown successfully. The crystallization process is semi-automated. It is controlled by computer after the growth parameters being set. However the weight of growing crystal and the change of process voltage should be observed carefully during the process to determine the optimal growth condition. On the other hand, the processes of seeding, annealing after crystal growth, and vacuuming are done manually. Especially, a very precise judgment in seeding time is needed to prevent the seed from being melted during seeding. The crystal growth experiences can help us to find the optimal process conditions and reduce manual operation mistakes to improve the stability of crystal growth.

並列關鍵字

Czochralski Pulling Method ； Langasite ； single crystal