- 期刊
奈米元件於任意位能型態的量子傳輸之計算模式
General Expressions for Quantum Transport in Arbitrary Potential Profile of Nanodevices
並列摘要
At arbitrary profile and any growth-direction, a theoretical method for the calculation of quantum transport in an ellipsoidal valley is presented. This method is developed using an effective mass Schrödinger equation including off-diagonal effective mass tensor elements. The L-electron effect on AlAs-GaAs-AlAs double barrier structures oriented in the [001], [111], and [110] growth directions is explored using the developed method.
延伸閱讀
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