In this work, the coplanar top gate bottom source/drain in-situ doped microcrystalline (μc-Si:H) thin film transistors (TFTs) were fabricated on the glass substrate. The X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) were used to investigate the material properties of μc-Si:H. The μc-Si:H TFT demonstrates high mobility of 280 cm^2/V-S, low subthreshold swing of 0.17 V/decade and Ion/Ioff ratio larger than 10^5 under low temperature of 200℃. Moreover, the output characteristic shows good electric properties with fairly low parasitic resistance of 1.52 MΩ- μm. This device with high performance and low process temperature becomes a candidate for future display industry.