- 期刊
新式非揮發性記憶體之發展與挑戰
Development and Challenges of the New Non-Volatile Memory
摘要
非揮發性記憶體（Non-Volatile Memory: NVM）在我們的日常生活中扮演著不可或缺的角色，舉凡手機、相機以及固態硬碟裡的記憶體都需要NVM元件來保存資料，目前市面上的NVM皆是屬於電荷儲存式（Charye trap）的快閃記憶體（Flash），然而隨著記憶體製程的微縮，這種電荷儲存式快閃記憶體（Charye trap Flash: CTF）將面臨其物理極限而無法作動，這個時候新式NVM的研究就顯得格外的重要，而新式NVM大致上又分成磁阻式記憶體（Magnetoresistive Random Access Memory: MRAM）、相變化記憶體（Phase Change Random Access Memory: PCRAM）以及電阻式記憶體（Resistive Random-access Memory: RRAM）三大類，而這三種記憶體又各有其優缺點，以下將逐一說明其優劣情勢，讓讀者對新式NVM有個概括的認識。
並列摘要
Non-volatile memory (Non-Volatile Memory: NVM) plays an important role in our daily lives. NVM components are required to save the data including cell phones, cameras and solid-state drive (SSD).Currently, most NVMs were charge-trap type Flash and there will malfunction when they meet their physical limit. In this moment, the researches of novel NVM become more and more important. There are three novel NVM including Magnetoresistive Random Access Memory (MRAM), Phase Change Random Access Memory (PCRAM) and Resistive random-access memory (RRAM). However, these NVMs have their own advantages and disadvantages in electrical application. And we will introduce their performance as following to give readers a picture of novel NVMs.