The capability of existing advanced metrology tools is not able to provide both of structural and elemental information at the same time. However, in many areas of research in material science, there is an overwhelming demand for advanced metrology, especially in semiconductor research of FinFET structures. It is therefore, of extreme interest to develop a method that provides data with resolution at atomic level for detailed characterization. This article will introduce a 3D Atom Probe Tomography method to overcome current analytical limitations in the field.