利用內摻雜磷及雷射熱退火技術達成高電子濃度及低接觸電阻的矽上鍺薄膜

High Electrically Active Phosphorus Concentration and Low Contact Resistance of Ge on Si by in-situ Doping and Laser Annealing

呂芳諒 ； 黃仕賢 ； 劉致為

《國家奈米元件實驗室奈米通訊》 22卷3期 (2015/09) Pp. 2-7

摘要

本文研究高磷摻雜磊晶鍺層特性並嘗試各種活化方式，最後利用雷射熱退火達成高活化磷摻雜到2x10^(20)cm^(-3)、高張應力0.32%和低接觸電阻值5.4x10^(-8)Ω-cm^2。除此之外，利用雷射熱退火製作的高摻雜n^+-Ge/p-Si異質接面二極體其理想因數1.6並可達到1x10^5電流開關比。

關鍵字

磊晶 ； 高磷摻雜 ； 接觸電阻

並列摘要

Characteristics of heavily phosphorus-doped epi-Ge and different activation process have been demonstrated. High electrically active phosphorus concentration of 2x10^(20) cm^(-3), high tensile strain of 0.32% and low specific contact resistivity of 5.4x10^(-8) Ω-cm^2 are achieved by laser annealing. In addition, n^+-Ge/p-Si heterojunction diode was fabricated with ideality factor of 1.6 and 1x10^5 on/off ratio.

並列關鍵字

Epitaxy ； Heavilty Phosphorus-doped ； Contact Resistivity