- 期刊
Comparison of turn-on Characteristics of Thyristor Structures Based on Wide Bandgap Materials
Laia keelutsooniga materjalidel põhinevate türistorstruktuuride ümberlülituskarakteristikute võrdlus
並列摘要
The aim of this paper is to investigate the behaviour of the break-over voltages of thyristor structures, based on wide bandgap materials, under different conditions. Influence of the narrow and wide base width, electron/hole lifetime, shunt and collector resistance, donor/acceptor concentration, temperature, and charge carrier recombination time on the break-over voltage has been investigated and analysed. On the basis of this information it is possible to make suggestions to the designers of the device to avoid expensive practical experiments.
延伸閱讀
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