Growth and Dielectric Properties of Pb(ScTa)(subscript 1-x)Ti(subscript x)O3 (PSTT) Thin Films by MOCVD Method

Chun-Hsiung Lin ； Philip A. Friddle ； Cheng-Hsin Ma ； Haydn Chen

《淡江理工學刊》 5卷1期 (2002/03) Pp. 1-6

https://doi.org/10.6180/jase.2002.5.1.01

並列摘要

Highly (002) textured Pb(ScTa)(subscript 1-x)Ti(subscript x)O3 (PSTT) (with composition x=0-0.3) thin films were deposited using metal-organic chemical vapor deposition (MOCVD) technique at temperature ranging from 600℃ to 685℃. Dielectric properties of these PSTT thin films showed strong dependency on the growth temperature and PT content. Ti addition acted as a ”Curie” temperature shifter, moving T(subscript max) from -10 to 120℃ with the dielectric constant peak value increasing from 1397 to 1992 (measured at 1 kHz) when composition x went from 0 to 0.3. Loss tangent values were generally below 0.025. For PSTT thin films with composition near its morphotropic boundary (x=0.3), the room temperature dielectric constants increased from 980 to around 1600 as the growth temperature increased from 650 to 685℃. In addition, the dielectric dispersion behaviors of films grown at different temperatures were compared.

並列關鍵字

PSTT Relaxor Ferroelectric ； MOCVD ； Thin Films ； Dielectric Properties