Design and Fabrication of RF MEMS Switch by the CMOS Process

This work investigates the fabrication of a RF (ratio frequency) MEMS (micro elector mechanical system) switch using the standard 0.35 μm 2P4M (double polysilicon four metal) CMOS (complementary metal oxide semiconductor) process and the post-process. The switch is a capacitive type, which is actuated by an electrostatic force. The structure of the switch consists of a CPW (coplanar waveguides) transmission lines and a suspended membrane. The CPW lines and the membrane are the metal layers of the CMOS process. The main advantage of the RF switch is only needed a simple post-process, which is compatible with the CMOS process. The post-process uses an etchant, silox vapox Ⅲ, to etch oxide layer to release the suspended membrane and springs. Experiment results show that the pull-in voltage of the switch is about 17 V. The insertion loss and return loss in the range of 10 to 40 GHz are -2.5 dB and -13 dB, respectively.

並列關鍵字

CMOS ； Post-process ； MEMS ； RF Switch

被引用紀錄

Lin, Y. C. (2013). 離子高分子金屬複合材料應用在雙頻性天線與可靠性之研究 [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.00254

國際替代計量

Design and Fabrication of RF MEMS Switch by the CMOS Process

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