- 期刊
閘控水平式P型雙載子接面電晶體於不同結構下電流增益特性之研究
A Study on Characteristic of Current Gain of Gate-Controlled Lateral PNP BJT under Different Structure
摘要
本研究主要探討考慮基底端電流(I(下標 sub))以及不考慮基底端電流(I(下標 sub))兩種情況下找出真正雙載子接面電晶體(BJT)特性和較好的電流增益，其所量測的閘控水平式P型雙載子接面電晶體(Gate-Controlled lateral PNP BJT)是一個4端點的元件，此元件採用台積電0.18μm BiCMOS製程技術完成，主要包含了集極(Collector)，基極(Base)，射極(Emitter)和閘極(Gate)。在CMOS技術中，射極和集極是當作源極和汲極來使用，此研究主要是針對兩種不同結構有N(上標 +)埋藏層(buried layer)及沒有N(上標 +)埋藏層(buried layer)的閘控水平式P型雙載子接面電晶體元件，在兩種不同設定的情況下做量測、討論其直流特性中電流增益的變化。在量測上，將其分為兩種情況討論：第一種情況是不考慮(I(下標 sub))，第二種情況是考慮(I(下標 sub))。由量測結果可知，兩種不同結構在不考慮(I(下標 sub))情況下，因為基底端浮接的關係，故得到之電流增益變化較大，且V(下標 G)在小於0V時，PMOS處於導通的狀態，所以此時量測出來的電流增益不是單純的電晶體特性，由於必須考慮到集極電流(I(下標 C))是否從基底端流失，在此是考量第二種情況去討論，唯有將基底端設定為主從式(slaver, VCB=0V; VSB=0V)才有所謂電晶體特性。在量測結果可發現兩種不同結構在主從式(slaver)設定方式下得到的電流增益遠比其它設定的好。
並列摘要
In this study we try to determine the true BJT properties and improved current-gains of Gate-Controlled lateral PNP Bipolar Junction Transistor (BJT) under two specific circumstances: with and without I(subscript sub). The Gate-Controlled lateral PNP BJT is a four-terminal device, which is made with TSMC 0.18 μm BiCMOS process technology. It consists of collector, base, emitter, and gate. The emitter and collector are formed same as the source and drain in CMOS technology. In this paper we measured the Gate-Controlled lateral PNP BJT with and without N(superscript +) buried layer under two different settings and discussed the current gain observed in DC characteristic. Our measurements considered two conditions: with and without I(subscript sub). The results revealed a greater change in current gain when I(subscript sub) was not considered because of the float at the Sub point. Additionally, PMOS is on when V(subscript G) is smaller than 0V, the observed current gain is not purely BJT characteristic. When I(subscript sub) is present, it is important to take into account loss of I(subscript C) from the Sub point. Moreover, only when the Sub point is set as slaver (V(subscript cb)=0V; V(subscript sb)=0V), it behaves like so-called BJT properties. A better current gain is observed for both structures, with and without buried layer, under slaver setting that the other setting.