超薄層矽金氧半場效電晶體在不同輕摻雜汲極與袋型離子佈值濃度對短通道效應之影響

Short-Channel Effects of the Different LDD and Pocket Doping Concentration on Ultra Thin Body SOI Devices

陳啓文(Chii-Wen Chen) ； 穆守駿(Shou-Chun Mu) ； 陳育廷(Yu-Ting Chen) ； 廖柏青(Bo-Ching Liao)

《明新學報》 42卷1期 (2016/02) Pp. 9-17

摘要

此篇是討論在超薄矽覆蓋絕緣層(UTB SOI)金氧半場效電晶體(MOSFET)裡面低摻雜汲極(LDD)和袋形植入(Pocket)高低摻雜的濃度在短通道效應下造成的影響。所探討到的技術為使用LDD來抑制熱載子效應的影響與次臨界擺幅退化(Subthreshold Swing, S.S.)，而Pocket為主要抑制短通道效應下的臨界電壓下滑與汲極引起的位能下降(Drain-Induced Barrier Lowering, DIBL)；此兩種不同的高低摻雜濃度，抑制著DIBL與S.S.的退化程度。

關鍵字

超薄型矽覆蓋絕緣層 ； 臨界電壓下滑 ； 低摻雜汲極 ； 袋形植入 ； 短通道效應

並列摘要

In this study, we present the impact on short-channel effects in ultra thin-body (UTB) silicon on insulator (SOI) MOSFETs by applying different doping concentration to the LDD and Pocket implantation structure. The LDD structure is used to suppress the influence of subthreshold swing(S.S.) enhanced by hot carrier injection (HCI) effects, and the pocket implantation structure to alleviate threshold voltage roll-off because of short channel effects and drain-induced barrier lowering (DIBL). We find these two techniques with different dopant concentration, show obvious distinction on inhibiting the degradation of Subthreshold Swing and Drain-Induced Barrier Lowering.

並列關鍵字

Ultar Thin Body ； Threshold Voltage Roll-off ； LDD ； Pocket ； Short-Channel Effects

參考文獻

Cavin, R. K., Lugli, P., & Zhirnov, V. V. (2012). Science and engineering beyond Moore's law. Proceedings of the IEEE, 100(5), Special Centennial Issue, 1720-1749

Mack, C. A. (2011, May). Fifty years of Moore's law. IEEE Transactions on Semiconductor Manufacturing, 24(2), 202-207

Sze, S. M. (2003). Semiconductor devices physics and technology (2nd ed.). New York: Wiley

Troutman, R. R. (1979). VLSI limitations from drain-induced barrier lowering. IEEE Journal of Solid-State Circuits, 14(2), 383-391

Yu, Bin., Wann, C. H. J., Nowak, E. D., Noda, K., & Hu, Chenming. (1997, April). Short-channel effect improved by lateral channel engineering in deep-submicronmeter MOSFET’s. IEEE Transactions on Electron Devices, 44(4), 627-634