- 期刊
TRANSFERRING-FREE TOP-GATED GRAPHENE TRANSISTORS FABRICATED ON GRAPHENE FILMS DIRECTLY GROWN ON SAPPHIRE SUBSTRATES
摘要
Transferring-free top-gated graphene transistors are demonstrated by using directly grown graphene on sapphire substrates. The improved field-effect mobility value 138 cm^2V^(-1)s^(-1) compared with back-gated transistors suggests that without the film transferring procedure, the device performances can be greatly enhanced. The results have demonstrated the potential of directly grown graphene for transferring-free graphene device fabrications.
延伸閱讀
- 田希文（2013）。Preparation and Properties of Graphene-Based Transparent Conductive Films〔博士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-2511201310274469
- 廖家翎（2013）。High Quality Graphene for Transparent Conductive Film Applications〔碩士論文，國立清華大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0016-2511201311303150
- Chang, C. W. (2013). Investigation of optoelectronic devices made with large-area graphene films [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.10018
- 邱鈺蛟（2014）。Design and Fabrication of Novel Graphene Microwave Transistors on Aluminium-Based Rigid Substrates〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2014.00148
- Ho, P. K. (2014). The Study of Graphene Materials Grown by Chemical Vapor Deposition and the Single-layer Graphene Transistors [master's thesis, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2014.00365