高介電絕緣層對先進金氧半場效應電晶體元件影響之研究

為了滿足現今市場對於電晶體其體積小、省功率、降低成本及提高速度的需求，而採取先進微影的技術以達到目的，但相對在元件內部的物理現象會造成電晶體的特性變化，像是短通道效應、汲極引致能障下降（DIBL）等等，使得特性曲線偏移。為了克服此問題，於是造就元件的演進，甚至從元件取代材料著手，目前已知把氧化層材料由原先的二氧化矽氧化層，改為使用High-κ材料，即高介電絕緣層，更能降低閘極漏電流、改善次臨界擺幅（subthreshold swing），且當溫度改變時，它的臨界電壓相位移變化也比二氧化矽小[Boucart et al, 2007]，基於這些良好特性，我們將深入研究並驗證其產生的物理現象及相關電場影響。

關鍵字

短通道效應；高介電絕緣層；閘極漏電流

並列摘要

In order to meet the IC application requirements in reduced transistor size and power consumption and higher speed, advanced lithography technology has been developed aggressively. However, as the transistors continue to scale, their physical characteristics have changed significantly due to short-channel effects, drain-induced barrier lowering (DIBL), etc. In order to overcome the scaling obstacle, new materials and novel transistor structures are being sought. For reducing gate leakage due to direct tunneling, high-κ materials have replaced conventional silicon dioxide. This work focuses on evaluating the impact of high-κ gate dielectric for MOSFETs using numerical simulation.

並列關鍵字

Short-channel effects ； high-κ gate dielectric ； gate leakage current

國際替代計量

高介電絕緣層對先進金氧半場效應電晶體元件影響之研究

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