在MgO緩衝層以射頻濺鍍法製備La3Ga5SiO14薄膜與特性之研究

Preparation and Characterization of Thin La3Ga5SiO14 Films on MgO Buffer Layers by RF Sputtering

胡毅(Yi Hu) ； 王逢偉(Feng-Wei Wang) ； 林和龍(Hur-Lon Lin)

《科學與工程技術期刊》 3卷4期 (2007/12) Pp. 69-76

https://doi.org/10.7117/JSET.200712.0069

摘要

La3Ga5SiO14(LGS)是一具有高機電耦合係數與幾近於零溫度延遲係數的新非鐵電型的壓電材料。在本研究中嘗試使用射頻磁束濺鍍法以具有化學計量比的LGS多晶靶材來製備此新型材料。在矽基板與MgO緩衝層上即時沉積後的薄膜呈現一非晶質結構，均必須經過退火處理方可使其結晶化，在矽基板上需使用1200℃退火溫度，而在MgO緩衝層上則可降低至1100℃。本研究並同時偵測出LGS薄膜具有光致發光的現象，在使用381nm為激發光源下，可以發出具有429nm的藍光，並同時發現光致發光與結晶化的程度是有一定的關係。

關鍵字

La3Ga5SiO14 LGS ； 射頻磁束濺鍍 ； 緩衝層 ； 退火處理 ； 結晶化 ； 光致發光

並列摘要

La3Ga5SiO14 (LGS) has high potential in applications as a new non-ferroelectric, piezoelectric material with a high electromechanical coupling factor and a near-zero temperature coefficient of delay (TCD). In this study, thin LGS films were prepared by an radio frequency (RF) sputtering technique on a SiO2/Si (111) substrate and a MgO buffer layer/Si(100) with stoichiometric LGS polycrystalline targets.
Crystallization of the amorphous as-deposited films was achieved by annealing. Thin crystalline LGS films on a trigonal Si substrate were obtained after annealing at an in-air temperature higher than 1200℃. However, the as-deposited films on MgO buffer layers commenced to crystallize under post-annealing for 5 hrs at in-air temperatures higher than 1100℃. These thin films exhibited a blue emission under investigation by photoluminescence (PL), wherein the emission peak was observed to be 429 nm under an excited light of λex=381nm. When examined by X-ray photoelectron spectroscopy (XPS), the PL emission from the films was attributed to the formation of oxygen vacancies.

並列關鍵字

La3Ga5SiO14 LGS ； radio frequency RF sputtering ； annealing ； crystallization ； photoluminescence