本論文主要利用化學氣相沉積法經由氣液固(VLS)機制在低製程溫度下成長一維氧化銦鋅(IZO)奈米線於ITO基板上,並使用掃描電子顯微鏡觀察一維氧化銦鋅奈米線樣本的表面形態、結構、長度、線徑與分佈情形,並利用X光單晶繞射儀鑑定其結構的結晶性,再利用X光能量散譜儀(EDS)做一維氧化銦鋅奈米線的成份分析。本實驗在成長一維氧化銦鋅奈米線的最佳實驗結果(參數為銦(In)顆粒的製程溫度為700℃、鋅(Zn)粉末的製程溫度為550℃、成長壓力為1 Torr、氬氣流量為50 sccm、氧氣流量為10 sccm),由FE-SEM的截面分析發現,本實驗氧化銦鋅奈米線為中空結構,奈米線線徑約為100 nm到150 nm,長約為5 μm,電阻值約20-150 Ω。
In this study, we report the fabrication of one-dimensional Indium Zinc Oxide (IZO) on an ITO glass substrate by chemical vapor deposition at low temperature via vapor-liquid-solid (VLS) mechanism. The morphologies and structural properties of the IZO nanowire were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). The IZO nanowires optimal experimental parameters are growth pressure is 1 Torr, argon gas flow of 50 sccm and oxygen flow of 10 sccm. In this condition, the idea temperatures are 700℃ for indium (In) particles and 550℃ for zinc (Zn) particles. The SEM images reveal that IZO nanowires have uniform diameters of approximately 100 nm to 150 nm, and their lengths are up to 5 μm The XRD results demonstrate that the nanowires are crystalline with highly preferential orientation. And our EDS analysis also proves that the composition ratio and this material are IZO nanowires.