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Investigated the Performance of MgZnO Ultraviolet Photodetectors Using Magnetron RF Sputtering System

並列摘要


In this work, the magnetron RF sputtering system was used to deposit the Mg(subscript x)Zn(subscript 1-x)O films with various Mg content. The MSM-UPDs based on the sputtering-deposited Mg(subscript x)Zn(subscript 1-x)O were also fabricated and characterized. From the reported experimental results of the XRD measurement and UV-VIS spectroscope demonstrate that a part of Zn atoms can be replaced by the Mg atoms in the Mg(subscript x)Zn(subscript 1-x)O films. At a 10 V bias, the dark current of Mg(subscript x)Zn(subscript 1-x)O (x=0~0.36) MSM-UPDs were 5.6pA (x=0.36) to 15.4pA (x=0). The photoresponsivity of 0.31A/W was achieved for all of the MSM-UPDs with various Mg content. When the Mg content x increases from 0 to 0.36 the cut-off wavelength of the detector varies from 380nm to 310nm and the corresponding rejection ratio decreases slightly from 871 to 792.

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