Current Conduction Mechanisms in an Advanced Metal-Insulator-Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes

一種由全金屬矽化鎳作為電極之先進MIM電容之電流傳導機制

李榮祥(Jung-Hsiang Lee)

《清雲學報》 31卷4期 (2011/10) Pp. 31-42

https://doi.org/10.7049/JCYU.201110.0031

摘要

一種使用全金屬矽化鎳電極和鈦酸鍶介電質且具低成本、高電容密度(25 fF/μm^2)之MIM電容已被開發出來。無需貴重金屬材料，低電阻率之Ni3Si、Ni2Si和NiSi矽化鎳電極已實現並分別量測出電阻率約為105、40和22 μΩ•cm。並展現出良好的漏電流密度為2×10^(-8)A/平方公分@1V。實驗顯示在高溫、低電場和上電極電子注入時肖特基發射為主要傳導機制。在Ni3Si/STO、Ni2Si/STO和NiSi/STO介面之肖特基勢壘高度(ΦB)分別計算出為0.98、0.91和0.78 eV。材料特性分析進一步顯示這種結構非常適合於先進MIM電容器。

關鍵字

鈦酸鍶 ； 高介電係數 ； 全金屬矽化鎳 ； 肖特基發射 ； 傳導機制

並列摘要

A low-cost metal-insulator-metal (MIM) capacitor with a high capacitance density of ~25 fF/μm^2 has been developed by using nickel fully silicided (Ni-FUSI) polycrystalline silicon electrodes and the SrTiO3 (STO) dielectric. Without requiring noble metal materials, low resistivities of Ni3Si, Ni2Si and NiSi electrodes have been achieved and determined to be around 105, 40, and 22 μΩ•cm, respectively. It also displays a good leakage current density of 2×10^(-8)A/cm^2 at 1 V. Experiments demonstrated that Schottky emission is the dominant conduction mechanism at high temperatures and low fields under the top-electrode injection. The schottky barrier heights (ΦB) at the Ni3Si/STO, Ni2Si/STO, and NiSi/STO interfaces were extracted firstly to be 0.98, 0.91, and 0.78 eV, respectively. Material Characterization further reveals that this structure is highly appropriate for advanced MIM capacitors.

並列關鍵字

SrTiO3 ； high-k ； nickel fully silicided Ni-FUSI ； schottky emission ； conduction mechanism