非均溫化學法製備超薄鎳基奈米薄膜

Fabrication of Ni-based Ultra Thin Film Using the Non-isothermal Electroless Deposition

周育賢(Yu-Hsien Chou) ； 宋鈺(Yuh Sung) ； 葛明德(Ming-Der Ger)

《界面科學會誌》 29卷3&4期 (2007/12) Pp. 177-185

https://doi.org/10.30020/JCCIS.200712.0005

摘要

本研究主要利用非均溫高溫加熱系統（Non-Isothermal Deposition，NITD）在p-type矽晶圓表面沉積一層低電阻、厚度薄的鎳基奈米薄膜。此法是利用局部高溫直接加熱基材與加熱板兩者極微小間隙之鍍液，使鍍液受到較大的反應驅動力（driving force），經由無電電鍍之析鍍原理產生自發性成核，析出金屬奈米粒子，並藉由熱擴散方式，直接在不具催化活性p-type矽晶圓（silicon-wafer）基材表面進行化學析鍍。本實驗以鍍液酸鹼值、操作溫度及鍍液組成作為操作參數，結果顯示，在析鍍溫度400℃、鍍液酸鹼值為4和添加4.13×10^(-3)M鉬酸鈉可製備之鎳基非晶態奈米薄膜厚度介於15~20 nm，電阻值約為113.8 μΩ-cm，具有應用於超大型積體電路之潛能。

關鍵字

非均溫化學鍍 ； 鎳基薄膜 ； 積體電路

並列摘要

The low resistivity and ultra-thin film of nickel-based alloy deposited on p-type silicon wafers without the complicated pretreatment of the Pd activator were prepared by non-isothermal deposition method (NITD) have been clearly investigated. The NITD system can provide a high driving force for the ion reduction and deposition owing to the high temperature in the localized gap, and then the reduced nuclei diffused from the designed space toward the substrate by thermal diffusion and convection to form a nickel-based thin film. The deposition solutions and operating conditions for preparing the nickel-based thin film are presented. The low resistivity (113.8 μΩ-cm) and ultra-thin film (15~20 nm) of nickel-based alloy was prepared with 4.13×10^(-3)M Na2MoO4 at 400℃ and pH 4. It is concluded that the Ni-based thin film produced by the proposed approach in this study are very promising in ultra-large scale integration (ULSI).

並列關鍵字

nickel-based ultra-thin film ； non-isothermal deposition ； ultra-large scale integration