The Ce_(0.9)Gd_(0.1)O_(2‐δ) ceramics with 500 ppm SiO_2 and with the different dopant of Zn (0.5, 1.0, 2.0, 3.0 at.%) were prepared by sol‐gel method. All the materials were single phase with a cubic fluorite structure. The relative densification reached a maximum at 1.0 at.% ZnO sintering at 1500℃ for 12 h. The conductivities showed sharp increase for the ceria system that contained of ZnO in the range of 0.5 to 1.0 at.% and beyond 1.0 at.%, the conductivity slightly decreased. For the solution adding 1.0 at.% ZnO had the highest total conductivity and grain boundary conductivity (σ_t=3.8×10^(‐3) S∙cm^(‐1), σ_(gb)=3.3×10^(‐2) S∙cm^(‐1) at 550℃) compared to the ceria system without ZnO (σ_(gi)=2.4×10^(‐3) S∙cm^(‐1), σ_(gb) =6.4×10^(‐3) S∙cm^(‐1) at 550℃).