The Electron Range and the Backscattering Coefficients in Compound Semiconductors: Comment on Z.Rouabah, A. Bouzid, C. Champion, N. Bouarissa [Sol.Stat.Comm. 151 (2011) 838]

A. Bentabet ； N. Fenineche ； A.Betka ； A. Azbouche ； Y. Bouhadda

《International Journal of Material Science》 3卷3期 (2013/09) Pp. 110-117

並列摘要

This work is a comment on the paper of Z.Rouabah et al [Sol.Stat.Comm. 151 (2011) 838]. Indeed, it is shown that the transport cross-section used in their work is inaccurate and really not based on Jablonski model [Phys. Rev. B 58 (1998) 16470] as well. Moreover, it is noted that their calculation method concerning the compound materials is not explained also not justified. Moreover, some recommendations have been indicated on the use of a given model (developed initially for a monatomic solid target) to study the compound material which is not respected in the case of the above mentioned paper. In addition, it is showen that all their results concerning GaN, GaAs and InSb semiconductor materials must be reviewed.

並列關鍵字

Semiconductors ； Low-energy Electron ； Electron Backscattering ； Electron Range ； Monte Carlo Simulation