- 期刊
- OpenAccess
A Linear Model for Characterizing Transient Behaviour in Wide Bandgap Semiconductor-based Switching Circuits
摘要
This paper presents a linear model for characterizing transient behavior in power conversion circuits that use wide bandgap semiconductors. It details analytical and experimental characterization of the circuit‐level transient phenomena affecting the performance of wide bandgap (WBG) semiconductors. Specifically observed behaviors including voltage overshoot, ringing, and false turn‐on are analyzed using equivalent linear circuit models supplemented with experimental characterization. The effect that the parasitic device capacitances have on each of these transient events is also investigated. In order for WBG semiconductor devices to deliver their full performance potential of significantly enhancing next generation power electronic systems, the aforementioned transient characteristics must be eliminated. Due to the agreement between the models' predicted results and experimental waveforms, the work presented here lays the foundation for optimizing the transient performance of power conversion circuits using WBG semiconductor devices.
延伸閱讀
- Mukhopadhyay, J., & Pandit, S. (2012). Modeling and Design of a Nano Scale CMOS Inverter for Symmetric Switching Characteristics. VLSI Design, 2012(), 163-175. https://doi.org/10.1155/2012/505983
- Nagy, A., Polanco, A., & Alvarez, M. (2011). Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors. Active and Passive Electronic Components, 2011(), 150-157. https://doi.org/10.1155/2011/895247
- GRUBIN, H. L., & BUGGELN, R. C. (2001). Wigner Function Methods in Modeling of Switching in Resonant Tunneling Devices. VLSI Design, 2001(), 221-227. https://doi.org/10.1155/2001/37412
- 王綉文（2014）。Automatic Behavioral Model Generation for Circuit Blocks in Mixed-Signal Designs〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0412201512024948
- Wang, L., Gong, S. D., Wen, J., & Yang, C. H. (2016). An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory. Journal of Nanomaterials, 2016(), 672-676-268. https://doi.org/10.1155/2016/8078165