- 期刊
ANALYSIS OF HOT-CARRIER DEGRADATION IN SMALL AND LARGE W/L n-CHANNEL TRANSISTORS
並列摘要
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of the hot-carrier stressing and of the layer dimensions. A large increases of the ideality factor, of the reverse recombination current, and of the series resistance are shown to be more significant for small values of L and IV. It is demonstrated that the degradation of parameters is mainly caused by the generation of interface traps.
延伸閱讀
- MARRAKH, R., & BOUHDADA, A. (2000). MODELING OF INTERFACE DEFECT DISTRIBUTION FOR AN n-MOSFETs UNDER HOT-CARRIER STRESSING. Active and Passive Electronic Components, 2000(), 137-144. https://doi.org/10.1155/APEC.23.137
- Kuo, J. M. (2012). Hot-carrier Induced Reliability Degradation in High Voltage P-LDMOS Transistors [master's thesis, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-0908201218165356
- Chen, S. Y. (2007). Studies on Hot-Carrier Induced Degradation for Deep Submicron and Nanometer MOSFETs [doctoral dissertation, National Taipei University of Technology]. Airiti Library. https://doi.org/10.6841/NTUT.2007.00250