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A BRIEF STUDY TO CLARIFY SOME ASPECTS RELATED TO VIBRATIONAL DENSITY OF STATES FOR THE FAR INFRARED RANGE IN AMORPHOUS SEMICONDUCTORS

並列摘要


Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.

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