- 期刊
MOCVD-GROWN InGaP/GaAs EMITTER DELTA DOPING HETEROJUNCTION BIPOLAR TRANSISTORS
並列摘要
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75A undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.
延伸閱讀
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- 林楷竣（2009）。A Novel High Frequency Vertical Bipolar Junction Transistor with CMOS Logic Compatible Process〔碩士論文，國立清華大學〕。華藝線上圖書館。https://doi.org/10.6843/NTHU.2009.00154