Theoretical Investigation of Ultrathin Gate Dielectrics

ALEXANDER A. DEMKOV ； XIAODONG ZHANG ； HEATHER LOECHELT

《VLSI Design》 2001卷 (2001/12) Pp. 135-143

https://doi.org/10.1155/2001/98032

摘要

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Sidielectric interface is used to generate the Si-SiO_2-Si and Si-SiON-SiO_2-Si model metaloxide- semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

關鍵字

Gate dielectrics ； Electronic structure ； Quantum transport ； Oxynitrides