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A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors

摘要


A quantum-kinetic equation accounting for the electron-phonon interaction is solved by a stochastic approach. Analyzed are three analytically equivalent integral formulation of the equation which appear to have different numerical properties. Particularly the path-integral formulation is found to be advantageous for the numerical treatment. The analysis is supported by the presented simulation results. A variety of physical effects such as collisional broadening and collision retardation introduced by the equation are discussed.

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