- 期刊
Integration of the Density Gradient Model into a General Purpose Device Simulator
摘要
A generalized Density Gradient model has been implemented into the device simulator Dessis [DESSIS 7.0 reference manual (2001). ISE Integrated Systems Engineering AG, Balgriststrasse 102, CH-8008 Zurich].We describe the multidimensional discretization scheme used and discuss our modifications to the standard Density Gradient model. The evaluation of the model shows good agreement to results obtained by the Schrodinger equation.
被引用紀錄
Weng, K. L. (2015). 增強型氮化鋁鎵/氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體之臨界電壓模擬研究 [master's thesis, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2015.00861
Wu, Y. S. (2011). 先進CMOS元件結構的解析模型建立－量子侷限效應及製程變異敏感度之探討 [doctoral dissertation, National Chiao Tung University]. Airiti Library. https://doi.org/10.6842/NCTU.2011.01078
延伸閱讀
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