以無機化學氣相沈積法製作薄膜材料

Thin Film Materials Prepared by Inorganic Chemical Vapor Deposition

李紫原(C. Y. Lee)

《化學》 56卷2期 (1998/06) Pp. 129-135

https://doi.org/10.6623/chem.1998019

摘要

本文以低壓化學氣相沈積法製作薄膜材料，利用各種滷化物與二氟次矽基為前驅物，於反應溫度高於500°C的條件下，沈積各種合矽材科於基材上，以TiX_4為前驅物製作矽化鈦，以TaX_5 為前驅物製作矽化鉭，若以主族元素滷化物GeX_4 為前驅物，則可得到矽化鈦。另一方面多晶的矽化鈦，也可由六氯乙烷及金屬鈦為前驅物在800°C 的低溫下得到，其反應路徑在文中有詳盡的探討。

關鍵字

薄膜 ； 化學氣相沈積 ； 金屬矽化物 ； 金屬碳化物

並列摘要

This work deposited thin film materials by a low pressure chemical vapor deposition system on substrates. By using MX_n (M=Ti, Ta. Ge, X=F, CI) and SiF_2 as the precursors, the deposition reaction occurred at a temperature exceeding 500°C. According to our results, the composition of thin films is a MSi related to the precursors used. The total reaction pathway was studied in detail. On other hand, polycrystalline titanium carbides were deposited by using C_2Cl_6 and titanium metal plate as the precursors, the carbonization reactions occurred at a temperature exceeding 800°C. Furthermore, the total reaction pathway was closely examined as well.

並列關鍵字

thin film ； chemical vapor depositon metal silicide ； metal carbide