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化學氣相沉積配位化合物:基本物性控制與合成策略

Coordination Compounds as CVD Precursors: Strategies for Tuning Their Chemical and Physical Properties

摘要


化學氣相沉積法製備金屬薄膜或多元金屬氧化物材料的發展在近年來極為蓬勃,已躍升為主流的薄膜技術。本文以化學合成的觀點,針對化學氣相沉積配位化合物的化學、物理性質的控制和基礎合成策略來做一系列詳細探討。

並列摘要


Chemical vapor deposition (CVD) has emerged to become a popular technology in preparing various metal and metal-containing thin-film materials for microelectronic applications. This article describes the design strategies and fundamental principles of modifying metal-organic CVD source complexes, based on the concept of organic, organometallic and coordination chemistry.

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