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半導體微波退火設備開發

Development of Semiconductor Microwave Annealing Equipment

摘要


若對材料施以正確的電磁波頻率,可對材料於較低溫度完成退火,達到節能減碳的目的。在工業上對微波頻段的電磁波吸收良好材料,若對工件施以微波加熱或退火,可於較低溫及較短時間就達到加熱或退火目的,同時達到節能及省時的功效。本文將介紹低頻微波(2.45 GHz)加熱技術於半導體摻質活化之應用,以低溫微波退火避免摻雜質擴散,以符合未來半導體5 nm以下之前段製程需求。

關鍵字

微波 半導體 退火

並列摘要


Having the magnetic wave - set at a chosen frequency - applied to the material, it can finish annealing process at lower temperature, which serves the purpose of energy saving and carbon reduction. In industry, we certain materials are found to be excellent at absorbing microwave-band electromagnetic waves. When we have workpieces made of these absorbent materials which are subjected to microwave heating or annealing, they can be heated or annealed at a lower temperature for a short time, implying effective in energy and time saving. This article will introduce the application of low frequency microwave (2.45 GHz) heating technology in semiconductor doping and activation, and the use of low-temperature microwave annealing that can help avoid the diffusion of dopants to meet the front-end process requirements of semiconductors below 5 nm and beyond in the future.

並列關鍵字

Microwave Semiconductor Annealing

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