摘要
隨著半導體技術演進，對鰭式電晶體淺接面摻雜及活化困難到越來越高。鰭式電晶體的鰭越做越高，且間距越做越小，傳統離子佈植及雷射活化已無法滿足需求。為避免離子佈植破壞矽晶格或因寬深比（aspectratio）的因素造成摻雜不完全之缺點，利用化學沉積法之電漿摻雜，可彌補離子佈植之缺點；另外，寬深比大之鰭式電晶體之鰭片底部的摻雜活化，由於傳統光學加熱如快速升溫退火（rapid thermal annealing, RTA）或雷射（Laser）之高溫退火，一則容易造成淺接面的摻雜擴散，二則由於光學穿透不佳，無法對鰭片底部摻雜之活化。此外，本文亦將首次介紹多片晶圓微波退火的優異成果。
並列摘要
With the evolution of semiconductor technology, it is difficult to dope and activate shallow junction of FinFET transistors. The height of fins of FinFET transistors are getting greater and the spacing between fins is getting smaller. As such, the traditional ion implantation and laser activation cannot meet the demand. In order to avoid the defects of ion implantation caused by the destruction of the silicon lattice or the incomplete doping due to the high aspect ratio, the plasma doping by the chemical vapor deposition method can compensate for the shortcomings of the ion implantation. The doping activation at the fin bottom of the high aspect ratio transistor is due to the high temperature annealing of the conventional optical heating such as rapid thermal annealing (RTA) or laser, the former of which tends to cause the doping diffusion of the shallow junction, and the latest of which is due to the poor optical penetration. In addition, this paper will introduce the excellent results of multi-wafer microwave annealing for the first time.