電漿量測技術

Plasma Diagnostic Technology

張家豪 ； 劉志宏

《機械工業雜誌》 463期 (2021/10) Pp. 56-62

摘要

電漿製程是現今半導體元件製造過程中極為重要的一環，隨著元件尺寸不斷縮小，使用材料多元化，對於製程技術與設備開發所面臨的挑戰也就更加嚴苛，有效掌握製程腔體電漿特性除了有助於深入了解製程中所發生的諸多物理機制及化學反應，更能提供設備開發者正確資訊減少錯誤嘗試機率。本文將針對常用之電漿診斷工具包含蘭牟爾探針及電漿光譜量測進行介紹。

關鍵字

電漿量測 ； 蘭牟爾探針 ； 放射光譜

並列摘要

Plasma process plays a crucial role in current semiconductor manufacturing. As the component size continues to decrease and materials used become diversified, the challenge faced by the process and equipment development are more severe. Thus, acquisition of plasma characteristics in the process chamber not only provides a deep understanding on physical mechanism and chemical reaction, but also provides correct information to the equipment builders so that trial-and-error attempt can be minimized. This article will focus on plasma diagnosis tools, including introduction of Langmuir probe and plasma spectroscopy measurement.

並列關鍵字

Plasma diagnostic ； Langmuir probe ； Optical emission spectroscopy

參考文獻

I. Langmuir, “Positive ion currents from the positive column of Mercury arcs”, Science, Vol. 58, pp. 290-291, 1923.

I. Langmuir and H. M. Mott-Smith, “Studies of electric discharges in gas at low pressures”, Gen. Elec. Rev., Vol. 616-623, pp. 449, Sept. 1924.

H. M. Mott-Smith and I. Langmuir, “The Theory of Collectors in Gaseous Discharges”, Phys. Rev., Vol. 28, pp. 727-763, 1926.

Lieberman, M. A.,Lichtenberg, A. J.(1994).Principles of Plasma Discharges and Materials Processing.John Wiley & Sons.

Chen, F. F.(2003).Lecture Notes on Langmuir Probe Diagnostics.Mini-Course on Plasma Diagnostics, IEEE-ICOPS meeting.(Mini-Course on Plasma Diagnostics, IEEE-ICOPS meeting).: