根據IHS(Information Handling Services)Markit的預測,全球功率半導體市場規模將以年增長率4.1%的速度成長。其中,以目前正蓬勃發展的第三代半導體材料碳化矽(Silicon Carbide, SiC)為例,此材料具備高頻、高功率、耐高溫且耐高壓的電器特性,預期未來會更廣泛的應用在電動車、充電樁、太陽能、離岸風電、基地台與5G等。硬度方面,SiC僅次於鑽石與碳化硼,因此在切割、研磨時也較為困難,並且晶圓尺寸越大越棘手,SiC晶錠切割為晶圓的過程即唯一重要的製程技術,如何透過快速、有效率的技術進行晶錠切割,許多公司都投入資源進行相關的技術研發。本文將針對近年來各種主要切割技術進行討論與分析,提供讀者在進入晶錠切割技術領域的參考。
According to the forecast of IHS (Information Handling Services) Markit, the global power semiconductor market will grow at an annual growth rate of 4.1%. Among them, SiC (Silicon Carbide) is a semiconductor material with strong dielectric breakdown capability, fast saturated electron drift velocity and high thermal conductivity. When applied to semiconductor components, it can provide high withstand voltage, high-speed switching and low on-resistance. In terms of hardness, SiC is second only to diamond and boron carbide, so it is more difficult to cut and grind, and the larger the wafer size, the more difficult it is. The process of cutting SiC ingots into wafers is an important process technology. How to slice SiC ingot quickly and efficiently is the technology that many companies have invested resources in research and development. This article will discuss and analyze various major SiC ingot slicing technologies in recent years and provide readers with a reference to enter this field.