矽晶片的表面形貌對近表面載子生命週期的影響

Effect of the Surface Morphology on Near Surface Carrier Lifetime of Crystal Silicon Wafers

林子卉(Tzu-Hui Lin) ； 田偉辰(Wei-Chen Tien) ； 朱安國(Ann-Kuo Chu)

《中正嶺學報》 46卷2期 (2017/11) Pp. 1-11

摘要

本研究我們採用傳統的含IPA的鹼性蝕刻液與不含IPA的IPA Free的鹼性蝕刻液兩種不同的蝕刻液對（100）矽基板進行表面的粗化製程，並自行架設載子生命週期量測系統，進行蝕刻後基板表面電性與光性的比較，我們調整蝕刻液之溶液濃度、溫度、蝕刻時間及添加劑含量等製程參數，以改善蝕刻後矽金字塔結構之表面形貌及基板的反射率。我們已成功使粗化後的矽基板之加權平均反射率小於15％、金字塔覆蓋率大於90％、表面載子生命週期達600μs。

關鍵字

氫氧化鉀蝕刻 ； 粗糙化 ； 非等向性 ； 載子生命週期

並列摘要

In this study, surface texturization on (100) silicon wafer using isopropanol-free alkaline solution was proposed and compared with texturization using conventional isopropanol alkaline etchant. Texturization conditions, such as concentration of etchant, etching temperature, and etching time were optimized to reduce optical reflection. In addition, lifetime of the carriers was measured by a home-made photoconductance system. Carrier lifetime up to 600 μs was obtained. The weighted reflectivity and surface coverage of pyramid of the textured Si substrate of better than 15% and 90% were achieved.

並列關鍵字

etching in KOH solution ； texture ； anisotropic ； carrier lifetime