以氧化石墨烯為電洞傳輸層之高分子太陽電池之研究

本研究以改良式Hummer法製備氧化石墨烯（Graphene Oxide, GO）作為替代poly（3,4-ethylenedioxythiophene）：poly（styrenesulfonate）（PEDOT:PSS）高分子太陽電池之電洞傳輸層（hole transport layer, HTL），電池結構為ITO/GO/P3HT:PCBM/Ca/AI。GO經不同溫度150、200及250℃熱處理形成薄膜。由結果發現以GO取代PEDOT:PSS製備之高分子太陽能電池，其短路電流密度（J_(sc)）、填充因子（FF）與光電轉換效率（PCE）都明顯提升，以200℃熱處理之GO製備的太陽能電池具最佳的光電特性，開路電壓（V_(oc)）為0.58V，J_(sc)由7.12 mA/cm^2提升至8.24 mA/cm^2提升了15.7%，FF由0.48提升至0.64提升了33.3%，PCE由2.27%提高至3.10%，提升了36.5%。

關鍵字

氧化石墨烯；高分子太陽能電池；光電轉換效率

並列摘要

The reduced graphene oxide (GO) as an alternative to the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) hole transport layer (HTL) in polymer solar cells (PSCs) were investigated. The reduced GO HTLs were prepared by the thermal treatment of solution processed GO film at 150, 200, and 250°C. The cell structure was ITO/GO/P3HT:PCBM (1:1 weight ratio)/Ca/Al. We study the effect of thermal treatment of GO on the photovoltaic performance. The short circuit density (J_(sc))、fill factor (FF) and power conversion efficiency (PCE) of the cells with thermally treated GO were always higher than those of the cell containing conventional PEDOT:PSS hole transport layer. The cell with GO treated at 200°C exhibited the best performance. It has the highest of J_(sc) of 8.24 mA/cm^2, an increase of 15.7%, the highest FF of 0.64, an increase of 33.3%, and the highest PCE of 3.10%, an increase of 36.5%, compared to reference polymer solar cells. These improvements are due to the high carrier mobility of graphene.

並列關鍵字

graphene oxide ； polymer solar cell ； power conversion efficiency

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