摻雜半導體結構於兆赫頻率下之場增益

由於兆赫波可以被激發出來，近年來，許多有關兆赫波之研究和重要應用也孕育而生。我們研究摻雜半導體波導結構對兆赫波電磁場增益之影響，使用電磁模擬針對不同結構做探討，並分析連續波和脈衝波之電磁場變化，設計具有強場增益之摻雜半導體的矽狹縫和矽狹縫鏈之結構，並探討其物理機制。未來可藉由製作和實驗量測本研究設計之元件，並應用至生物影像、顯微鏡、感應、偵測、保全和高速電路等等。

關鍵字

兆赫波；共振腔；砷化銦；矽；場增益

並列摘要

After the terahertz wave generation was found, many research and important applications in terahertz waves have been published and proposed. We study the field enhancements in the waveguide structures by doped semiconductor material, and analyze their electromagnetic fields for different structures under the plane wave illumination or the short pulse. We design several doped silicon slots cavity and slot chains with large field enhancement, and describe their physical mechanism. Our designed structures can be investigated by the fabrication and experiment setup in the future, and used for the devices in the applications of bio-image, microscopy, sensor, detector, security, and high-speed electronics.

並列關鍵字

teraherz ； cavity ； Drude model ； indium arsenide ； silicon ； field enhancement

參考文獻

[1] M. Tonouchi, Cutting-edge terahertz technology," Nature Photonics, vol. 1, pp. 97-105, Feb. 2007.

[4] S.-G. Park, M. R. Melloch, and A. M.Weiner, Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling," Applied Physics Letters, vol. 73, pp. 3184-3186, 1998.

[5] A. Arbabi, A. Rohani, D. Saeedkia, and Safavi-Naeini, A terahertz plasmonic metamaterial structure for near-‾eld sensing applications," IEEE, 2008.

[6] J.-H. DAI, J.-H. LEE, Y.-L. LIN, and S.-C. LEE, Ingaas quantum rings for terahertz detectors," Japanese Journal of Applied Physics, vol. 47, no. 4, pp. 2924-2926, 2008.

[7] Z. Fu, Q. Gan, Y. J. Ding, and F. J. Bartoli, From waveguiding to spatial localization of thz waves within a plasmonic metallic grating," IEEE Joural of Selected Topics in Quantum Electronics, vol. 14, pp. 486{490, April 2008.

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摻雜半導體結構於兆赫頻率下之場增益

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