使用砷化鎵基板之波長1.3微米半導體雷射的動態分析

Dynamic Analysis of 1.3μm GaAs-based Semiconductor Lasers

欒嘉興(Jia-Xing Luan)

指導教授 ： 毛明華

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2004年)

https://doi.org/10.6342/NTU.2004.00095

摘要

在本論文中，我們對使用砷化鎵基板，發光波長在1.3微米的半導體雷射進行測量；測量的樣品包括以氮砷化銦鎵為主動層的第一型量子井雷射910830C，還有以砷化銦/砷化銦鎵量子點為主動層的量子點雷射C1512、C1513以及4-917、4-924。
在室溫底下，我們對樣品進行光功率-電流、電激發光以及動態特性測量。在光功率-電流的測量上，我門觀察到量子點層數會影響臨界電流密度；共振腔長度同樣為1.2毫米，五層量子點樣品4-917臨界電流為每平方公分161.7安培，而十層量子點樣品4-924臨界電流為每平方公分223.1安培。
在動態特性的測量上，波長在1.3微米的量子點雷射，我們所測量到最大的鬆弛震盪頻率為2.67GHz，調變頻寬到達4.1GHz。至於量子井雷射樣品910830C，我們則是切取不同共振腔長度來測量，成功觀察到共振腔長度在0.4毫米時，最大鬆弛震盪頻率到達7.4 GHz。

關鍵字

砷化鎵 ； 1.3微米 ； 半導體 ； 雷射 ； 動態分析

並列摘要

In this paper, 1.3μm GaAs-based semiconductor lasers including of both InGaAsN quantum well lasers and InAs/InGaAs quantum dot lasers have been measrred.
At room temperature, light-current, spectral and dynamic characteristics of lasers have been investigated. We observed the threshold current density will be effect with the layers of quantum dot lasers. Threshold current density of 5-stack quantum dot laser with 1.2 mm cavity length was achieved 161.7 A/cm2, and threshold current density of 10-stack quantum dot laser with 1.2 mm cavity length was achieved 223.1 A/cm2.
The maximum relaxation oscillation frequency of 1.3 µm InGaAs/GaAs quantum dot lasers achieved is 2.67 GHz, corresponding to a modulation bandwidth of 4.1 GHz. And the maximum relaxation oscillation frequency of 1.3 µm InGaAsN/GaAs quantum well lasers achieved is 7.4 GHz.

並列關鍵字

Dynamic ； Analysis ； 1.3μm ； GaAs-based ； Semiconductor ； Lasers

參考文獻

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