二六族半導體硒化鈹鋅鎘之光學特性研究

Optical research of beryllium chalcogenides II-VI semiconductors : Cd1-x-yZnxBeySe

蔡文景(Wen-Ching Tsai)

指導教授 ： 陳永芳

國立臺灣大學/理學院/物理研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.00086

摘要

本論文主要研究烏采結構的二六族半導體-硒化鈹鋅鎘晶體的光學特性，由於其能隙較三五族半導體為寬，故可應用在短波長元件的製作上。從螢光光譜的測量分析得知，此四元半導體的能隙可由1.91電子伏特到3.01電子伏特，涵蓋幾乎整個可見光範園，故透過適當的成份比混合，理論上即可製作特定發光波段的元件。我們也利用MREI模型、SC模型和測量而得的拉曼光譜來分析其聲子的行為，所得到的實驗數據和理論模型的推導結果相符。最後我們也做了發光生命週期的測試，並提供一個方法來研究尚未做成元件的半導體發光材料，即持續性地以電子束照射樣品，並同時測量其發光光譜，以我們的研究樣品而言，發現摻了鈹確實可使二六族半導體的發光時間延長，但含量必須低於百分之十，才有最好的增益效果。

關鍵字

II-VI半導體

並列摘要

The wurtzite-type Cd1-x-yZnxBeySe crystals grown by the high-pressure Bridgman method were investigated here. First, we performed the photoluminescence (PL) spectra to ascertain the band gap information. Next, we measured the Raman spectra and discussed the results with the modified random-element-isodisplacement (MREI) model and the spatial correlation (SC) model. The experimental results are in good agreement with these two theoretical models. Finally, a method based on the continuous exposure of the electron beam of cathodoluminescence (CL) measurement was introduced to recognize the aging characteristics of these samples. The results show that in order to improve the degradation problem, the incorporation of beryllium content in II-VI compounds should be less than 10%. In addition, we demonstrate that CL image is a very powerful tool to reveal the generation of defects of an optoelectronic solid under external perturbation.

並列關鍵字

CdZnBeSe ； quaternary

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