矽/矽鍺異質結構共振穿隧元件之研究

Resonant Tunneling Device in Si/SiGe Heterostructure

鄭聰翰(Tsung-Han Cheng)

指導教授 ： 鄭鴻祥

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00162

摘要

矽鍺材料具有能與矽基半導體工業整合的優點。由於擁有高電子遷移率、負電組特性及良好高頻響應的特性，近年矽鍺材料及電子元件，以躍升成為半導體工業界的寵兒，並以應用在手機、射頻技術、全球定位系統、功率放大器、無線網路、動態隨機存取記憶體、靜態隨機存取記憶體等等。此外，隨者磊晶技術的成熟，許多小尺寸的量子元件已可成功製照。在本文中，我們將報告一種利用矽/矽鍺異質結構製作而成的量子元件-共振穿隧二極體。

關鍵字

共振穿隧元件

並列摘要

Silicon/Silicon Germanium(Si/SiGe) has the advantage of being fully compatible with the Si based semiconductor industry. In recent years, SiGe has became much attractive for its properties of high electron mobility, NDR properties and good high-frequency response and has been applied in mobile phone, radio frequency(RF) technology, global positioning system(GPS), power amplifier(PA), wireless LAN, SRAM DRAM technology and so on. Besides, with the progress of the growth technology, many quantum devices with small sizes have been accomplished. In this thesis, one of the quantum devices, the resonant tunneling diodes(RTDs), with Si/SiGe heterostructure operating at low and room temperature are reported.

並列關鍵字

Resonant tunneling diode

參考文獻

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