高功率高導熱氮化鎵高電子遷移率功率電晶體設計

Development of High-power High-thermal Conductivity GaN High Electron Mobility Transistors

李宇軒(Yu-Hsuan Lee)

指導教授 ： 黃建璋

國立臺灣大學/電機資訊學院/光電工程學研究所/碩士(2019年)

https://doi.org/10.6342/NTU201900640

摘要

此篇文章中，我們成功開發出高功率高導熱氮化鎵高電子遷移率功率電晶體。TSV矽穿孔結構可以有效的改善元件的散熱和減少熱效應對元件的影響。

我們比較了沒有矽穿孔和有矽穿孔元件結構的直流特性和脈衝量測中隨著時間變化的電流在不同的工作週期情況下。我們也介紹了電流崩塌效應和自發熱效應在不同的脈衝條件下。

散熱議題在高電壓以及高頻電子元件中是個重要的存在。

關鍵字

氮化鎵高電子遷移率電晶體 ； 電流坍塌現象 ； 矽穿孔 ； 散熱 ； 脈衝量測 ； 自發熱效應

並列摘要

In this work, we successfully develop of a high-power high-thermal conductivity GaN High Electron Mobility Transistors (GaN HEMTs). TSV (Through Silicon Via) structure can effectively improve heat dissipation and reduce the effect of thermal effects on devices.

We compared the DC characteristics and the pulse measurement of current variation with time under different duty cycles between w/o TSV and TSV structure. We also introduce the Current collapse and self-heating effect in different pulse.

Heat dissipation in high voltage and high frequency devices is a factor of major concern.

並列關鍵字

GaN HEMT ； current collapse ； TSV (Through Silicon Via) ； heat dissipation ； pulse measurement ； self-heating effect

參考文獻

Reference

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