矽晶圓超精密輪磨之工程分析

The Engineering Anlysis of Ultra Precision Grinding of Silicon Wafers

張明燦(Ming-Tsan Chang)

指導教授 ： 楊宏智

國立臺灣大學/工學院/機械工程學研究所/碩士(2005年)

https://doi.org/10.6342/NTU.2005.00314

摘要

輪磨加工製程於半導體產業應用逐漸受到重視，在矽晶圓製造、晶圓再生、晶圓薄化封裝都有廣泛應用，其優點是品質穩定、產出良率高。輪磨加工後之晶圓物性尺寸常是決定晶圓良窳的關鍵，同時晶圓翹曲(Warp)的問題，又是輪磨製程須加以控制的重要項目。本論文針對矽晶圓輪磨加工後矽晶圓之物性進行工程分析，以找出影響輪磨加工物性變化的因素。對於輪磨加工殘留應力的計算，以X 光繞射原理量測倒空間晶格，提出殘留應力計算法；並以實驗設計法找出影響矽晶圓超精密輪磨加工後的殘留應力及物性的加工參數因子，以為調整參數最佳化的基礎，並觀察殘留應力與晶圓翹曲之相關性；本研究並量測輪磨加工中之溫度，分析溫度對殘留應力及晶圓翹曲之影響；同時分析銜接輪磨製程的拋光及清洗製程後，矽晶圓之殘留應力與物性之變化。

關鍵字

矽晶圓 ； 輪磨 ； 殘留應力 ； 翹曲

並列摘要

In the semiconductor industry, the grinding process is recently introduced in a wide variety of fields such as the fabrication of silicon wafer, the silicon wafer recycling process, and the silicon wafer thinning process due to its high yielding rates and the resulting qualities of the products. The superior characteristics of the ground wafer are usually produced through its excellent physical properties. However, the warp of ground silicon wafer, which is one of the most serious problems, should be carefully controlled. In this thesis, the physical properties of ground wafer are analyzed to find the factors which affect the results. The residual stress of the silicon wafer is measured and estimated by reciprocal lattice unit of X-ray diffraction measure. The grinding parameters which decide the residual stress and physical properties of ground silicon wafers are analyzed through design of experiments and the optimum grinding conditions are then sought. Also, the correlation between the grinding temperature, residual stress and the warp of ground wafers is investigated. Finally, the residual stress and physical properties are measured and compared to investigate the effects of the polishing process which follows the grinding process.

並列關鍵字

silicon wafer ； grinding ； residual stress ； warp

參考文獻

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