銀銦鎵硒太陽電池吸收層材料之製備與特性分析

Preparation and Characterization of Silver Indium Gallium Diselenide as the Absorber in Thin-film Solar Cells

邱國瑞(Guo-Ruei Chiu)

指導教授 ： 呂宗昕

國立臺灣大學/工學院/化學工程學研究所/碩士(2011年)

https://doi.org/10.6342/NTU.2011.10177

摘要

本研究第一部分透過溶膠-凝膠法製備前驅物後，利用硒化程序成功製備出硒化銀鎵(AgGaSe2)化合物粉體。當改變前驅物中鎵離子與銀離子的濃度比例時，可以製備出單相AgGaSe2粉體。為了探討硒化製程對於粉體晶相的影響，研究中採用兩種硒化方式進行硒化。當前驅物混合硒粉時，硒化後可得到單相AgGaSe2。然而僅以硒蒸氣作為硒源進行合成時，所製備的粉體為AgGaSe2與Ag9GaSe6共存相。並依據拉曼光譜與Rietveld分析的結果，可確定製備的AgGaSe2粉體為屬於黃銅礦結構。根據快速退火實驗結果推論出AgGaSe2粉體反應機制為三步反應。而液態硒可以促進前驅物中銀與硒進行反應，幫助合成單相AgGaSe2。
第二部分以溶膠-凝膠法製備前驅物粉體，並進行硒化以製備銀銦鎵硒(AgIn1-xGaxSe2)化合物粉體。透過改變前驅物中鎵離子含量，可以成功調控材料的晶體結構。當前驅物中鎵離子含量增加時，粉體的晶格常數與粒徑會隨之降低。而將前驅物與硒粉、分散劑混合，製備出水系漿料。並利用塗佈後硒化製程，在還原氣氛下成功製備單相銀銦鎵硒薄膜。在調整前驅物薄膜中鎵離子含量下，可成功製備不同能隙值之銀銦鎵硒薄膜。

關鍵字

銀鎵硒 ； 銀銦鎵硒 ； 薄膜太陽電池 ； 溶膠凝膠

並列摘要

In this study, the sol-gel method followed by the selenization process was developed to synthesize AgGaSe2 powders. The molar ratios of gallium ions to silver ions were controlled to prepare pure AgGaSe2 powders. Two kinds of selenization processes were employed in this study for investigating the formed phases of the obtained powders. As the sol-gel derived precursors were mixed with the Se powders, pure phase AgGaSe2 powders were successfully prepared. When the precursors without mixing Se powders were selenized using selenium vapor, AgGaSe2 coexisted with the impurity-Ag9GaSe6. The reaction mechanism was proposed as a three-step reaction. Based on the results, the selenium liquid in the selenization process promotes the reaction of Ag and Se when the precursors were mixed with selenium powders.
In the second part of the study, pure phase of AgIn1-xGaxSe2 powders were successfully prepared by selenizing the mixture of sol-gel derived precursors and Se powders. Lattice parameters and grain sizes were decreased with increasing the gallium-ion contents of the prepared powders. The pastes containing the sol-gel derived precursors and Se powders were used to prepare the precursor films, followed by the selenization process. Single phase of AgIn1-xGaxSe2 films were prepared without using selenium vapor. As the molar ratios of gallium ions to IIIA ions were elevated, the band gap energy of the obtained films were nonlinearly increased.

並列關鍵字

AgGaSe2 ； Ag(In,Ga)Se2 ； thin-film solar cell ； sol-gel

參考文獻

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