高速電子遷移率電晶體及互補式金氧半場效電晶體之微波功率放大器之研究

Research of HEMT and CMOS Microwave Power Amplifier

紀秉松(Ping-Sung Chi)

指導教授 ： 王暉

國立臺灣大學/電機資訊學院/電信工程學研究所/碩士(2009年)

https://doi.org/10.6342/NTU.2009.00586

摘要

無資料

關鍵字

功率放大器(PA) ； X頻段 ； K頻段 ； 高速電子遷移率電晶體(pHEMT) ； 互補式金氧半場效電晶體(CMOS) ； 微波單晶積體電路(MMIC) ； 高效率 ； 高功率 ； 反向閘級電流 ； 功率寬頻

並列摘要

The goal of this thesis is to design and implement four power amplifiers, two in pHEMT and two in CMOS processes, including two X-band high efficiency power amplifiers, a 24 GHz balanced amplifier, and a K-band power amplifier.
The first part of the thesis presents a harmonic tuned power amplifier at X-band. Adding harmonic loading circuits at the output and the input of the transistor can improve the overall output power and power added efficiency of the power amplifier. The circuit is designed in 0.15-μm low-noise pHEMT technology and has a measured maximum PAE of 48.5% at 10.5 GHz. An abrupt flush of the drain current is obtained in measuring this amplifier, and the measurement phenomenon and mechanism of the abrupt flush of the drain current due to reverse gate current are also investigated in this part.
The second part focuses on the design of high power amplifier at 24 GHz using 0.15-μm power pHEMT technology. Two 8 finger 800-μm devices are combined in a current method in the two-stage PA, and then using the balanced configuration combines two same two-stage PAs again. Considering the process variation of small capacitors in the circuit design, re-simulation results show good agreement with measurements. The re-design results indicate that the odd mode oscillation is illuminated and process variation only has less effect on the circuit.
The third part shows an X-band power amplifier with the high PAE and the small chip size using 0.18-μm CMOS process. In order to obtain wide bandwidth at power and PAE performance, broadband output and input matching network are adopted in this power amplifier. From the measurements, the power amplifier obtained the best PAE of 25.7% and saturation output power of 23.8dBm at 9.5 GHz. Besides, this PA demonstrates the 1-dB power bandwidth from 7.8 to 11 GHz and the PAE insides this bandwidth all exceed 20%. To our knowledge, this is a power amplifier with the highest PAE, the smallest chip size to date in CMOS process at X-band.
The final part presents a K-bnad high power amplifier with the wide power bandwidth implemented by 0.13-μm CMOS technology. Broadband output power matching and broadband input conjugate matching lead to good power and PAE performances at the designed band. This PA achieves a measurement saturation output power of 18.6 dBm at 24 GHz with a power bandwidth of 6.5 GHz, and the PAE all exceeds 10% at this bandwidth. To our knowledge, this is a power amplifier with the widest power bandwidth and high saturation output power to date in CMOS process at K-band.

Index Terms—power amplifier (PA), X-band, K-band, pHEMT, CMOS, monolithic microwave integrated circuit (MMIC), high efficiency, high power, reverse gate current, wide power bandwidth.

並列關鍵字

power amplifier (PA) ； X-band ； K-band ； pHEMT ； CMOS ； monolithic microwave integrated circuit (MMIC) ； high efficiency ； high power ； reverse gate current ； wide power bandwidth

參考文獻

[1] Federal Communications Commission, FCC 02-04, Section 15.515.15.521

[2] N.O. Sokal and A. D. Sokal, “Class E-a new class of high-efficiency tuned single-ended switching power amplifiers,” IEEE J. Solid-State Circuits, vol. SC-10, pp. 168-176, June 1975.

[3] Guillermo Gonzalez, Microwave Transistor Amplifiers – Analysis and Design, 2nd ed., Prentice Hall, 1996.

[4] David M. Pozar, Microwave Engineering, 3rd ed., Wiley, 2005, Chapter 8.

[5] B. Razavi, “RF Microelectronics” Prentice-Hall, Inc., 1998.