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  • 學位論文

使用矽核光纖製作具有高品質因子迴音廊模態之矽微米球共振腔

Fabrication of Si Microsphere Resonators with High Q Whispering Gallery Modes by Using Si-cored Fibers

指導教授 : 王倫
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摘要


在本論文中,我們將粉末套管法與垂直下拉法做結合來製作單晶矽核光纖(silicon-cored fibers)。我們使用成本便宜許多的多晶矽粉來取代成本高昂的單晶矽棒或晶種來製作矽核光纖。藉由優化抽絲的相關參數後,可以成功製作出長度長達一公尺的單晶矽核光纖,也因為是單晶的原因,其傳輸損耗可以被降低到小於世界上其他的團隊。最後抽出來的矽核光纖其尺寸約為玻璃包覆層直徑100-300微米、矽核心直徑10-30微米。 我們根據先前製作玻璃微光纖的經驗與玻璃光纖抽絲系統來對矽核光纖做二次抽絲,並成功的製作出矽核錐狀光纖(silicon-cored tapered fiber)。使用氫氧焰當作熱源與電動馬達來當作移動源。已成功將一個原先尺寸為矽核心直徑20微米抽細到矽核心直徑2.6微米。 我們採用二氧化碳雷射來加熱矽核光纖中裸露的矽核心來快速製備具有高品質因子(quality factor)迴音廊模態(whispering gallery modes)的矽微米球共振腔(silicon microsphere resonator)。使用玻璃錐狀光纖耦合法來激發在矽微米球上的迴音廊模態,得到的最高品質因子為4 x 10<5>。本文中,也藉由熱光效應(thermo-optic effect)來探討關於在矽材料上的共振波長飄移現象。

並列摘要


Single-crystal silicon-cored fibers were made by using a combined techniques of powder-in-tube and vertical-drawing. Much cheaper polycrystalline silicon powders substituting expensive single-crystal silicon powders or seed rods were packed into a fused silica tube. By optimizing the drawing parameters, meter-long silicon-cored fibers were obtained with ultralow transmission losses because the entire lengths of silicon cores were single crystalline. The Si-cored fibers were drawn with resultant silica cladding and Si core diameters being in the range of 100-300 microns and 10-30 microns, respectively. We also demonstrated a fiber drawing system for fabricating Si cored tapered fiber. A fiber drawing system equipped with oxy-hydrogen flame and transition stage was used. According to the previously accumulated knowledge in fabrication of silica microfiber, we successfully fabricated Si cored tapered fibers with diameter of 2.6 microns in the waist section from an original Si-cored fiber with diameter of 20 microns. Silicon microsphere resonators which exhibited high quality factor (Q) whispering-gallery-modes (WGMs) could be rapidly fabricated from Si-cored fibers using CO2 laser reformation. WGMs were excited by using the tapered silica fiber coupling technique, and a record resonant Q as high as 4 x 10^5 was obtained. The shift of resonant wavelength caused by thermo-optic effect of Si material was also observed.

參考文獻


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