矽奈米線場效電晶體用於禽流感病毒H5N2之偵測

Detection of Avian Influenza Virus H5N2 by Silicon Nanowire Field Effect Transistors

李長璂(Chang-Chi Li)

指導教授 ： 陳逸聰

國立臺灣大學/理學院/化學研究所/碩士(2007年)

https://doi.org/10.6342/NTU.2007.00543

摘要

禽流感的傳染近年來極受重視。禽流感病毒上的血凝集素(hemagglutinin)辨
識宿主細胞表面的唾液酸(sialic acid)醣類，進而感染宿主細胞。禽流感病毒變異
迅速，突變的禽流感病毒血凝集素已可感染人類，威脅甚大。一旦爆發禽流感大
流行，快速有效的病毒檢測對防疫很重要。本研究以矽奈米線場效電晶體
(SiNW-FETs)偵測禽流感病毒(AIV,一種禽流感病原體) H5N2。我們以金奈米粒子
(20 nm)當催化劑並以矽甲烷、二硼烷為起始物，用化學氣相沉積合成出單晶的
硼參雜矽奈米線。以黃光微影製程製作出矽奈米線場效電晶體作為感測器。p 型
半導體的矽奈米線場效電晶體以源極汲極的電流對背面閘極電壓的量測圖來鑑
定電性。以此矽奈米線場效電晶體作為不需標示、靈敏、有選擇性並可即時現場
偵測的生物感測器。修飾3-(trimethoxysilyl) propyl aldehyde 於矽奈米線表面，醛
基可與H5N2 抗體的胺基反應鍵結。設計一微流體通道( 6.25 mm× 500 μm × 50 μm )
可使不同濃度的禽流感病毒樣品流經矽奈米線場效電晶體，禽流感病毒因而與矽
奈米線上的抗體作用。禽流感病毒的電荷產生的電場對於p 型半導體的矽奈米線
有閘極效應，造成矽奈米線場效電晶體電導的變化，提供快速且靈敏的禽流感病
毒H5N2 偵測。

關鍵字

矽奈米線 ； 場效電晶體 ； 禽流感病毒

並列摘要

The infection of avian influenza has drawn an intensive research recently. The first
step of the infection indicates that hemagglutinin on the surfaces of viruses can bind
to the sialic acid on the surface of an infected cell. Mutant avian influenza viruses
have seriously threatened to human beings, because a variety of hemagglutinin
structures on the viruses can recognize different species for subsequent infections.
Once epidemic occurs, a fast and effective detection of the viruses will be extremely
important for the epidemic control. In this study, we detected avian influenza virus
(AIV) H5N2, the pathogen of avian influenza, by using silicon nanowires based
field-effect transistors (SiNW-FETs). Single-crystalline SiNW with boron doping
have been synthesized by a chemical vapor deposition method using both silane and
diborane as the reaction precursors and gold nanoparticles (20 nm in diameter) as a
catalyst. For the sensory application, SiNW-FETs have been fabricated following
typical photolithographic procedures. The p-type semiconductive devices of
SiNW-FETs, characterized by measuring their source-drain current vs. back-gate
voltage (I-Vg) curves, can be used as a label-free, sensitive, and selective biological
sensor with the capabilities of real-time and in-situ detections. To detect AIV H5N2,
SiNW-FETs were modified with 3-(trimethoxysilyl) propyl aldehyde on the surfaces
of SiNW, in which the aldehyde group could bond to the antibodies of AIV H5N2. A
microfluidic channel ( 6.25 mm× 500 μm × 50 μm ) was designed to couple with the
SiNW-FETs to allow the flowing of H5N2 viruses in different concentrations to reach
the sensor for examination. An electrostatic gating effect due to the interaction
between AIV H5N2 and their antibody on the surface of SiNW-FETs caused a
variation of the electric conductance inside the SiNW-FETs, thus providing a quick
and sensitive detection of H5N2 viruses.

並列關鍵字

Silicon nanowire ； FET ； Avian influenza virus

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